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V35PW10HM3/I is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE SCHOTTKY 100V 35A SLIMDPAK. Review the specifications below when checking this part for your BOM.
The V35PW10HM3/I is a high current density surface-mount TMBS (Trench MOS Barrier Schottky) rectifier manufactured by Vishay General Semiconductor. It features an ultra-low forward voltage of 0.36 V at IF = 5 A and operates with a maximum repetitive peak reverse voltage of 100 V and a maximum average forward rectified current of 35 A. The device supports a peak forward surge current of 260 A and functions within an operating junction temperature range of -40 to +150 °C. Packaged in a SlimDPAK (TO-252AE) case, it meets MSL level 1 standards and is AEC-Q101 qualified.
Verify the specific ordering code HM3 suffix confirms AEC-Q101 qualification status before procurement. Ensure the package matches the SlimDPAK (TO-252AE) mechanical dimensions. Confirm compliance with JESD 201 class 2 whisker test requirements if applicable to your design specifications.
Select this component when designing circuits requiring high efficiency operation and low thermal resistance. Consider the 35 A average forward current rating and the 100 V reverse voltage capability. Evaluate the thermal characteristics against your heatsinking strategy to ensure the junction temperature remains within the specified operational limits.
This part belongs to the eSMP® series of high current density surface-mount rectifiers from Vishay. It represents an evolution in Trench MOS Barrier Schottky technology designed to replace standard planar diodes in applications demanding higher performance and lower profile packaging solutions.
V35PW10-M3/I serves as the non-automotive grade equivalent variant.
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V35PW10HM3/I is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is…
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