V6P22C-M3/H

Diode Arrays Overview

The V6P22C-M3/H is a high current density surface-mount TMBS rectifier manufactured by Vishay General Semiconductor. It features a dual anode common cathode configuration in an SMPC (TO-277A) package. The device supports a maximum repetitive peak reverse voltage of 200 V and provides a total maximum average forward rectified current of 6.0 A, with 3.0 A per diode. Peak forward surge current is rated at 70 A. Typical instantaneous forward voltage is 0.61 V at 1.5 A and 0.68 V at 3.0 A. Operating junction temperature ranges from -40 °C to +175 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses.
• Features a very low profile typical height of 1.1 mm suitable for automated placement.
• Meets MSL level 1 requirements with a LF maximum peak soldering temperature of 260 °C.

Diode Arrays Applications

• Low voltage high frequency inverters
• Freewheeling applications
• DC/DC converters
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm compliance status. The base part number indicates commercial grade specifications. Confirm that the halogen-free and RoHS-compliant attributes align with project regulatory requirements before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component for designs requiring high efficiency and low thermal resistance in compact surface-mount layouts. Ensure the circuit design accommodates the 6.0 A total current rating distributed across two diodes. Validate thermal management strategies to maintain junction temperatures within the specified operating range during peak load conditions.

Diode Arrays Part Context

This component belongs to the eSMP series of high current density surface-mount rectifiers. It represents an evolution in Trench MOS Barrier Schottky technology designed to replace traditional planar diodes in space-constrained power conversion applications where low forward voltage is critical for system efficiency.

Diode Arrays Replacement Considerations

V6P22C-M3/I serves as an alternative delivery mode variant with identical electrical characteristics but differs in reel packaging quantity and dimensions.

Diode Arrays FAQ

What is the typical junction capacitance per diode?

The typical junction capacitance is 130 pF when measured at 4.0 V reverse bias and 1 MHz frequency.

Is this component qualified for automotive applications?

Standard versions are commercial grade. Automotive qualification via AEC-Q101 is available specifically through the HM3 ordering code suffix.

How is the forward current rated for this dual diode package?

The device has a total maximum average forward rectified current of 6.0 A, which corresponds to 3.0 A per individual diode within the common cathode configuration.