V6P22CHM3/H

Diode Arrays Overview

The V6P22CHM3/H is a high current density surface-mount TMBS (Trench MOS Barrier Schottky) rectifier manufactured by Vishay General Semiconductor. It features a dual common cathode configuration within an SMPC (TO-277A) package, designed for automated placement. The device supports a maximum repetitive peak reverse voltage of 200 V and provides a total maximum average forward rectified current of 6 A (3 A per diode). Key electrical characteristics include a peak forward surge current of 70 A per diode and a typical instantaneous forward voltage of 0.61 V at 1.5 A. It operates within a junction temperature range of -40 °C to +175 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop and reduced power losses.
• Features a very low profile construction with a typical height of 1.1 mm.
• Includes automotive qualification under the AEC-Q101 standard.
• Complies with MSL level 1 requirements per J-STD-020.

Diode Arrays Applications

• Low voltage high frequency inverters
• Freewheeling applications
• DC/DC converters
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify that the specific ordering code includes the HM3 suffix to confirm AEC-Q101 automotive qualification. Ensure the base part number matches the required revision code if specified in design documentation. Confirm compliance with halogen-free and RoHS directives as indicated by the M3 designation. Validate thermal management requirements against the provided junction-to-ambient resistance values before finalizing procurement.

Diode Arrays Selection Notes

Select this component when designing systems requiring high efficiency and low forward voltage drops in compact surface-mount layouts. The dual common cathode configuration allows for efficient use of board space in bridge or polarity protection topologies. Consider the 175 °C maximum junction temperature rating for high-temperature environments. Evaluate the 70 A surge current capability against potential inrush conditions in the target application circuit.

Diode Arrays Part Context

This device belongs to the eSMP series of high current density surface-mount rectifiers from Vishay. It represents an evolution in Trench MOS Barrier Schottky technology, offering improved performance over standard planar structures. The SMPC package provides robust mechanical stability and thermal dissipation capabilities suitable for demanding power conversion applications.

Diode Arrays Replacement Considerations

V6P22C-M3/H

Diode Arrays FAQ

What is the maximum average forward rectified current per diode?

The maximum average forward rectified current is 3.0 A per diode, resulting in a total of 6.0 A for the dual common cathode device.

Does the V6P22CHM3/H meet automotive standards?

Yes, the HM3 suffix indicates that the device is AEC-Q101 qualified for automotive applications.

What is the typical forward voltage at 1.5 A?

The typical instantaneous forward voltage is 0.61 V when tested at an forward current of 1.5 A and a junction temperature of 125 °C.