VN1206L-G

$1.84

Description：MOSFET N-CH 120V 230MA TO92-3
Series：-
Mfr：Microchip Technology
Package：Bag

SKU:e153507a2573 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

VN1206L-G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 120V 230MA TO92-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for VN1206L-G

Description：MOSFET N-CH 120V 230MA TO92-3
Series：-
Mfr：Microchip Technology
Package：Bag
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：120 V
Current - Continuous Drain (Id) @ 25°C：230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：125 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92-3
Package / Case：TO-226-3, TO-92-3 (TO-226AA)

Single FETs, MOSFETs datasheet and documents for VN1206L-G

VN1206L-G

Single FETs, MOSFETs Overview

The VN1206L-G is an N-Channel Enhancement-Mode Vertical DMOS FET manufactured by Microchip Technology. It features a drain-to-source breakdown voltage of 120V and a maximum static on-state resistance of 6.0Ω at VGS=10V. The device operates within a temperature range of -55°C to +150°C, with a continuous drain current of 1.0A and a pulsed current of 2.0A. Packaged in a TO-92 configuration, it includes an integral source-drain diode.

Single FETs, MOSFETs Feature Summary

Free from secondary breakdown and thermal runaway due to positive temperature coefficient
Low power drive requirement combined with high input impedance
Fast switching speeds supported by low input capacitance
Integral source-drain diode for simplified circuit design

Single FETs, MOSFETs Applications

Motor controls
Converters
Amplifiers
Switches
Power supply circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix (e.g., L-G, P002) to confirm packaging type and quantity. Confirm RoHS compliance status as indicated by the suffix. Ensure the TO-92 package dimensions match your PCB footprint requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high input impedance and fast switching capabilities. Consider the 120V breakdown voltage and 6.0Ω on-resistance for load matching. Evaluate thermal management needs based on the 132°C/W junction-to-ambient resistance in the TO-92 package.

Single FETs, MOSFETs Part Context

This vertical DMOS transistor utilizes a silicon-gate manufacturing process to combine bipolar power handling with MOS input characteristics. It is designed for switching and amplifying applications where low threshold voltage and high gain are critical requirements.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other N-channel enhancement-mode vertical DMOS FETs offering similar 120V ratings and TO-92 packages. Verify pinout compatibility and electrical parameters such as RDS(ON) and BVDSS before substitution.