Single Diodes VS-C20CP07L-M3 product image

VS-C20CP07L-M3

  • Description:DIODE SIL CARB 650V 10A TO220AC
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube

SKU:1f64837dcf62 Category: Brand:

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VS-C20CP07L-M3 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE SIL CARB 650V 10A TO220AC. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for VS-C20CP07L-M3

  • Description:DIODE SIL CARB 650V 10A TO220AC
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):10A
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:55 µA @ 650 V
  • Capacitance @ Vr, F:430pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-220-2
  • Supplier Device Package:TO-220AC
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for VS-C20CP07L-M3

VS-C20CP07L-M3

Single Diodes Overview

The VS-C20CP07L-M3 is a silicon carbide (SiC) Schottky diode manufactured by Vishay General Semiconductor. It features a single common cathode configuration housed in a TO-220AC through-hole package. The device supports a maximum repetitive reverse voltage of 650 V and an average forward rectified current of 10 A per diode. Key electrical parameters include a forward voltage of 1.5 V at 10 A, a reverse leakage current of 55 µA at 650 V, and zero reverse recovery time. It operates within a junction temperature range of -55°C to +175°C.

Single Diodes Feature Summary

  • Utilizes silicon carbide technology for superior thermal performance and high-temperature stability compared to traditional silicon devices.
  • Features a true zero reverse recovery time, eliminating switching losses and reducing electromagnetic interference in high-frequency applications.
  • Designed with a rugged construction capable of withstanding high surge currents and harsh operating environments.

Single Diodes Applications

  • High-efficiency DC/DC converters
  • Uninterruptible power supplies (UPS)
  • Industrial motor drives

Single Diodes Procurement Notes

Verify the specific package type upon ordering, as datasheets may list variations such as TO-247 or TO-220AC for similar part numbers. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure the selected variant matches the required current and voltage ratings for the target circuit design.

Single Diodes Selection Notes

Select this component for applications requiring low switching losses and high thermal efficiency. The SiC material allows for higher operating temperatures than silicon alternatives. Verify that the TO-220AC package provides adequate heat sinking for the intended 10 A continuous current load.

Single Diodes Part Context

This component belongs to Vishay's VS-3C series of silicon carbide Schottky diodes. These devices are engineered for power conversion systems demanding high reliability and efficiency. The series leverages wide-bandgap semiconductor properties to minimize conduction and switching losses.

Single Diodes FAQ

What is the reverse recovery time of the VS-C20CP07L-M3?

The device has a specified reverse recovery time of 0 ns due to its Schottky barrier structure.

What is the maximum junction temperature rating?

The maximum operating junction temperature is +175°C.

VS-C20CP07L-M3VS-C20CP07L-M3

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