VT2080C-E3/4W

Diode Arrays Overview

The VT2080C-E3/4W is a dual Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration with two independent diodes housed in a TO-220AB package. The device supports a maximum repetitive peak reverse voltage of 80 V and provides a maximum average forward rectified current of 10 A per diode, totaling 20 A for the device. It exhibits an ultra-low forward voltage drop of 0.52 V at 5 A and 0.60 V at 10 A. The component operates within a junction temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve low forward voltage drop and reduced power losses.
• Provides high efficiency operation suitable for demanding power conversion environments.
• Features matte tin plated leads that are solderable per J-STD-002 standards.

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix matches the required package type. The 'E3' suffix indicates RoHS compliance and halogen-free status. Confirm the '/4W' designation corresponds to the tube delivery mode containing 50 units per tube. Ensure the application environment respects the specified thermal resistance and derating curves for optimal performance.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required in a through-hole TO-220AB package. It is appropriate for applications needing 80 V blocking capability and 10 A continuous current per diode. Consider the thermal characteristics and forward voltage specifications against alternative packages like ITO-220AB or D2PAK if space constraints differ.

Diode Arrays Part Context

This part belongs to the V(B,I)T2080C family of dual TMBS rectifiers from Vishay. Other variants in this series include the VFT2080C-E3/4W (ITO-220AB), VBT2080C-E3/4W (D2PAK), and VIT2080C-E3/4W (TO-262AA). All share identical electrical characteristics but differ in physical package dimensions and mounting styles.

Diode Arrays Replacement Considerations

Direct substitutes within the same electrical specification and package include the VFT2080C-E3/4W (ITO-220AB) and VBT2080C-E3/4W (D2PAK). Verify pinout compatibility and thermal management requirements before substituting with different package types.

Diode Arrays FAQ

What is the maximum non-repetitive avalanche energy rating?

The VT2080C-E3/4W has a non-repetitive avalanche energy rating of 110 mJ per diode at TJ = 25 °C with L = 60 mH.

Does the component meet moisture sensitivity level 1?

Yes, the datasheet confirms it meets MSL level 1 per J-STD-020 with a maximum peak reflow temperature of 245 °C.

What is the typical thermal resistance from junction to case?

The typical thermal resistance (RθJC) per diode is 3.0 °C/W for the TO-220AB package.