WN3S40H100CQ

Diode Arrays Overview

The WN3S40H100CQ is a silicon Schottky rectifier manufactured by WeEn Semiconductors. It features a dual common cathode configuration housed in a TO-220F-3 through-hole package. The device supports an average forward current of 40 Amperes and withstands a repetitive peak reverse voltage of 100 Volts. Key electrical characteristics include a maximum forward voltage drop of 850 millivolts at rated current and a non-repetitive peak surge current capability of 600 Amperes. The component operates within a junction temperature range from -40°C to +175°C, ensuring reliability in high-power applications.

Diode Arrays Feature Summary

• Dual common cathode configuration for efficient bridge-less PFC or full-wave rectification topologies
• Ultra-low forward voltage drop minimizes conduction losses and thermal generation
• High thermal stability with a maximum operating junction temperature of 175°C
• Robust surge current handling capability protects against transient overloads

Diode Arrays Applications

• Bridge-less Power Factor Correction (PFC) circuits
• DC-DC converter output rectification
• Free-wheeling diodes in synchronous buck converters
• General-purpose power supply rectification

Diode Arrays Procurement Notes

Verify the specific suffix 'CQ' against the official WeEn Semiconductors datasheet to confirm exact marking, tape-and-reel specifications, and RoHS compliance status. Ensure the ordering part number matches the required packaging format and terminal plating options defined in the manufacturer's latest documentation before finalizing procurement.

Diode Arrays Selection Notes

Select this component when designing circuits requiring high current capacity with low forward voltage loss. The 40A rating and 100V breakdown voltage suit low-voltage, high-current DC-DC conversion stages. Consider the TO-220F-3 package for effective heat dissipation without additional insulators, and verify that the 175°C junction temperature rating aligns with the system's thermal management strategy.

Diode Arrays Part Context

This device belongs to the WN3S series of high-performance Schottky rectifiers from WeEn Semiconductors. The series utilizes advanced silicon technology to achieve superior switching characteristics compared to standard PN junction diodes. The dual common cathode arrangement allows for compact circuit designs in applications demanding high efficiency and reduced component count.

Diode Arrays FAQ

What is the maximum forward voltage drop for the WN3S40H100CQ?

The maximum forward voltage drop is 850 mV at the rated forward current.

Does the WN3S40H100CQ support high-temperature operation?

Yes, the device is rated for a maximum junction temperature of 175°C.

What is the surge current capability of this dual Schottky diode?

The component can withstand a non-repetitive peak surge current of 600 A.