XLMG3411R070RWHT

Description：PROTOTYPE
Series：-
Mfr：Texas Instruments
Package：Bulk

SKU:cb37eaf78b04 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

XLMG3411R070RWHT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is PROTOTYPE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for XLMG3411R070RWHT

Description：PROTOTYPE
Series：-
Mfr：Texas Instruments
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for XLMG3411R070RWHT

XLMG3411R070RWHT

Single FETs, MOSFETs Overview

The LMG3411R070RWHT is a 600V, 70mΩ Gallium Nitride (GaN) power transistor with an integrated driver. It features a single N-channel configuration in a 32-VQFN package. The device operates with a supply voltage of 9.5V to 18V and supports PWM logic interfaces. Key electrical parameters include a maximum load voltage of 480V, a typical on-resistance of 70 milliohms, and a maximum output current of 12A. It includes built-in protections for overcurrent, overtemperature, and under-voltage lockout.

Single FETs, MOSFETs Feature Summary

Integrates a 600V GaN FET with a dedicated gate driver for high-density designs.
Includes per-cycle overcurrent protection and thermal shutdown capabilities.
Features an internal bootstrap circuit and a 5V regulated output.
Supports non-inverting logic and PWM input signals.

Single FETs, MOSFETs Applications

High-density power conversion systems
Hard-switching mission profiles
Power stages requiring superior system performance over cascode configurations

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix RWHT against the official Texas Instruments datasheet to confirm the tape and reel packaging format. Ensure the component matches the RoHS3 compliance status and MSL level 3 requirements for your assembly process. Cross-reference the manufacturer part number LMG3411R070RWHT with authorized distributors to avoid counterfeit components.

Single FETs, MOSFETs Selection Notes

Select this component when designing for high-efficiency applications requiring low on-resistance and integrated protection. The 32-VQFN package suits space-constrained layouts. Consider the 9.5V to 18V supply range and 480V load voltage limits during circuit planning. Verify compatibility with existing control logic levels and thermal management strategies for the 125°C junction temperature rating.

Single FETs, MOSFETs Part Context

This part belongs to the LMG341xR070 family from Texas Instruments, designed to enable high-density power conversion. It serves as a direct replacement for traditional silicon MOSFETs in applications demanding higher switching speeds and reduced system size. The integrated driver simplifies the design by eliminating external gate drive components.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult the official Texas Instruments documentation for potential alternatives within the LMG341x series or other compatible GaN devices.

Single FETs, MOSFETs FAQ

Does the LMG3411R070RWHT have a body diode?

Texas Instruments provides specific documentation titled 'Does GaN Have a Body Diode?' to clarify the conduction characteristics of this device, indicating it differs from traditional silicon MOSFETs.