ZTX557

Single Bipolar Transistors Overview

The ZTX557 is a PNP silicon planar medium power high voltage transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage of -300 V and supports a continuous collector current of -0.5 A with a peak pulse current of -1 A. The device dissipates up to 1.0 W of power and operates within a temperature range of -55°C to +200°C. Electrical characteristics include a minimum static forward current transfer ratio (hFE) of 50 at -50 mA, a transition frequency (fT) of 75 MHz, and a collector-emitter saturation voltage of -0.3 V under specified conditions.

Single Bipolar Transistors Feature Summary

• High voltage capability with a -300 V collector-emitter breakdown rating
• Medium power handling with 1.0 W total power dissipation
• Robust thermal performance supporting junction temperatures up to +200°C
• Standard E-Line TO-92 compatible plastic packaging

Single Bipolar Transistors Applications

• High voltage switching circuits
• Linear regulator output stages
• Power supply control loops
• General purpose amplification in industrial equipment

Single Bipolar Transistors Procurement Notes

Verify the component datasheet revision and manufacturer specifications against official Diodes Incorporated documentation before integration. Confirm that the package type matches the required footprint and that electrical ratings align with the target circuit design parameters. Ensure compliance with relevant environmental standards such as RoHS where applicable.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high voltage PNP switching or linear regulation capabilities. Consider the -300 V breakdown voltage and 0.5 A current limit when designing load paths. Evaluate the thermal management requirements based on the 1.0 W power dissipation rating and the operating temperature range to ensure reliable performance under varying environmental conditions.

Single Bipolar Transistors Part Context

The ZTX557 belongs to the ZTX55x series of PNP silicon transistors from Diodes Incorporated. This family includes variants like the ZTX556 and ZTX558, differentiated primarily by their voltage ratings. The ZTX557 specifically targets medium power applications needing higher voltage tolerance than standard low-voltage transistors while maintaining compatibility with common through-hole mounting styles.

Single Bipolar Transistors Replacement Considerations

The ZTX556 serves as a lower voltage alternative within the same series, offering identical current and power ratings but with a reduced -200 V breakdown voltage. Designers should verify if the system voltage requirements exceed the ZTX556's limits before substituting.