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ZTX795ASTOA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS PNP 140V 0.5A E-LINE. Review the specifications below when checking this part for your BOM.
The ZTX795ASTOA is a PNP silicon planar medium-power high-gain transistor manufactured by Diodes Incorporated. It features a collector-emitter voltage (VCEO) of -140 V and a continuous collector current (IC) of -0.5 A. The device offers a static forward current transfer ratio (hFE) ranging from 100 to 800, with a typical gain of 250 at IC = 0.2 Amps. It operates within a temperature range of -55°C to +200°C and utilizes an E-Line (TO-92 compatible) package.
Verify the component against the official datasheet DS33305 Rev. 2-3 to confirm specifications. Note that the manufacturer explicitly states the ZTX795A is not recommended for new designs; contact Diodes Incorporated directly for further information or alternative recommendations before procurement.
Select this component only if existing designs require its specific electrical characteristics, particularly the -140 V rating and TO-92 form factor. Due to the manufacturer's recommendation against using it in new designs, evaluate alternative transistors that offer similar performance metrics but are currently supported for new product introductions.
The ZTX795ASTOA belongs to the ZTX795A series of PNP silicon planar medium-power high-gain transistors produced by Diodes Incorporated. This series is designed for robust performance in demanding environments, featuring an operating junction temperature range up to 200°C and compatibility with standard through-hole mounting techniques.
Diodes Incorporated explicitly states that the ZTX795A is not recommended for new designs. Contact the manufacturer or your local representative for approved substitute part numbers suitable for new product development.
The maximum collector-emitter voltage (VCEO) is -140 V.
No, the manufacturer explicitly states that the ZTX795A is not recommended for new designs.
The transition frequency is typically 100 MHz when measured at IC = -50mA and VCE = -5V.
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