ZVN4306GVTC

Single FETs, MOSFETs Overview

The ZVN4306GV is an N-channel enhancement mode vertical DMOS FET manufactured by Diodes Incorporated. It features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 2.1A at +25°C. The device exhibits a maximum static drain-source on-state resistance (RDS(on)) of 0.33Ω at VGS=10V and ID=3A, or 0.45Ω at VGS=5V and ID=1.5A. It operates within a temperature range of -55°C to +150°C and is housed in a SOT223 package.

Single FETs, MOSFETs Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
• Features low gate threshold voltage and fast switching speed capabilities.
• Constructed with lead-free finish and complies with RoHS directives; halogen and antimony free.

Single FETs, MOSFETs Applications

• DC-DC converters
• Solenoids/relay driver for automotive applications
• Stepper motor drivers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as packaging quantities and carrier types vary by variant. Confirm compliance requirements such as RoHS and halogen-free status directly from the manufacturer's datasheet before procurement. Ensure the selected part number matches the required tape and reel specifications for automated assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when a 60V N-channel MOSFET with low RDS(on) is required for compact surface-mount designs. The SOT223 package provides adequate thermal dissipation for currents up to 2.1A. Consider the gate threshold voltage characteristics to ensure compatibility with the intended logic level drive voltages in the target circuit design.

Single FETs, MOSFETs Part Context

This device belongs to the ZVN series of N-channel enhancement mode vertical DMOS FETs from Diodes Incorporated. The series is engineered for general-purpose switching applications requiring low on-resistance and robust performance. The ZVN4306GV specifically targets applications needing efficient power handling in a small form factor.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer for qualified alternatives if this specific part number is unavailable.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the ZVN4306GV?

The maximum pulsed drain current (IDM) is 15 A.

Is the ZVN4306GV suitable for automotive applications?

It is designed for solenoid and relay drivers in automotive applications. For specific change control requirements like AEC-Q100 qualification, contact the manufacturer directly.