ZVP2106ASTZ

Single FETs, MOSFETs Overview

The ZVP2106ASTZ is a P-channel enhancement mode vertical DMOS FET manufactured by Diodes Incorporated. It operates with a drain-source voltage of -60 V and a continuous drain current of -280 mA at 25°C. The device features a static drain-source on-state resistance of 5 Ω at VGS=-10V and ID=-500mA. It supports a pulsed drain current of -4 A and has a power dissipation rating of 700 mW at 25°C. The component utilizes an E-Line TO-92 compatible package with three pins.

Single FETs, MOSFETs Feature Summary

• P-channel enhancement mode vertical DMOS technology
• TO-92 compatible leaded package configuration
• High gate-source voltage tolerance up to ±20 V

Single FETs, MOSFETs Applications

• General purpose switching applications
• Load switch circuits
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ASTZ against official Diodes Incorporated documentation to confirm packaging details such as tape and reel specifications or environmental compliance status. Ensure that the requested part number matches the exact electrical characteristics and pinout defined in the ZVP2106A datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a P-channel MOSFET with a 60 V breakdown voltage and low on-resistance. Consider the thermal performance limits, specifically the 700 mW power dissipation at ambient temperature, when designing heat dissipation strategies. Verify that the required gate drive voltage aligns with the specified threshold and on-state conditions for optimal performance.

Single FETs, MOSFETs Part Context

This component belongs to the ZVP series of small signal field-effect transistors produced by Diodes Incorporated. The series includes various P-channel devices optimized for general-purpose switching. The ZVP2106A variant specifically targets applications needing moderate voltage handling with a compact through-hole compatible footprint.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other P-channel MOSFETs offering similar -60 V ratings and comparable RDS(on) values. Verify pin compatibility and package dimensions if substituting into existing PCB layouts.