ZXTS1000NE6TA

Single Bipolar Transistors Overview

The ZXTS1000NE6TA is a PNP silicon low saturation switching transistor integrated with a Schottky barrier diode in a single SOT-23 package. The transistor provides a collector-emitter voltage of -12V and continuous collector current of -1.25A, featuring a minimum static forward current transfer ratio (hFE) of 300. The integrated Schottky diode offers a reverse voltage rating of 40V and a forward current capacity of 0.5A. This combination enables efficient unidirectional current flow with low forward voltage drop, ideal for power conversion, voltage regulation, and signal amplification in electronic circuits.

Single Bipolar Transistors Feature Summary

• Integrates a PNP transistor and Schottky diode in a compact SOT-23 package to reduce component count and PCB space.
• Provides high gain with a minimum hFE of 300 for reliable switching performance.
• Features low saturation voltage characteristics for efficient power handling.
• Includes a fast-switching Schottky diode with low forward voltage drop.

Single Bipolar Transistors Applications

• Mobile telecomms
• PCMCIA & SCSI interfaces
• DC-DC conversion

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TA corresponds to the 3000-unit reel quantity on 8mm embossed tape. Confirm the device marking '1000' matches your assembly requirements. Ensure compatibility with standard SOT-23-6 footprint dimensions during PCB layout. Check for RoHS compliance status if required by your manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when space constraints require combining a switching transistor and a protection or freewheeling diode. It is suitable for applications demanding low saturation voltage and high gain. Consider the thermal resistance values for heat dissipation planning. Verify that the -12V voltage rating meets the circuit's maximum operating conditions.

Single Bipolar Transistors Part Context

This device belongs to the ZXTS series of integrated transistor-diode combinations manufactured by Diodes Incorporated (formerly Zetex). It is designed for surface-mount technology applications requiring compact solutions. The SOT-23-6 package allows for automated placement, facilitating high-volume production in consumer electronics and telecommunications equipment.

Single Bipolar Transistors Replacement Considerations

Check datasheets for equivalent PNP/Schottky integrated devices from other manufacturers. Verify pinout compatibility and electrical parameters such as VCEO, IC, and VR before substitution.

Single Bipolar Transistors FAQ

What is the minimum static forward current transfer ratio (hFE) for the transistor?

The minimum hFE is 300 at IC = -10mA and VCE = -2V.

What are the thermal resistance values for the device?

The junction-to-ambient thermal resistance is 138°C/W for a single die 'on' and 113°C/W for both dies 'on'.

What is the reverse recovery time of the integrated Schottky diode?

The reverse recovery time is 10ns, measured when switched from IF = 500mA to IR = 500mA.