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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
International RectifierIGBT 600V 13A TO263-3-901BulkPG-TO263-3-901Surface Mount--55°C ~ 150°C (TJ)
International RectifierIRGS6B60 - IGBT WITH ULTRAFAST SBulk--*-
International RectifierIGBT NPT 600V 28A D2PAKBulkD2PAKSurface Mount--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 28A D2PAKTape & Reel (TR),Cut Tape (CT),BulkD2PAKSurface Mount--55°C ~ 175°C (TJ)
International RectifierIGBT NPT 600V 22A TO-262BulkTO-262Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 430V 20A TO-262TubeTO-262Through Hole--40°C ~ 175°C (TJ)
International RectifierIGBT NPT 600V 31A TO262-3BulkPG-TO262-3Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 31A TO-262BulkTO-262Through Hole--55°C ~ 150°C (TJ)
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