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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IRGS6B60KPBF $0.85 | International Rectifier | IGBT 600V 13A TO263-3-901 | Bulk | PG-TO263-3-901 | Surface Mount | - | -55°C ~ 150°C (TJ) |
![]() IRGS6B60KTRLPBF $1.32 | International Rectifier | IRGS6B60 - IGBT WITH ULTRAFAST S | Bulk | - | - | * | - |
![]() IRGS8B60KPBF $0.72 | International Rectifier | IGBT NPT 600V 28A D2PAK | Bulk | D2PAK | Surface Mount | - | -55°C ~ 175°C (TJ) |
![]() IRGS8B60KTRLPBF $1.79 | Infineon Technologies | IGBT NPT 600V 28A D2PAK | Tape & Reel (TR),Cut Tape (CT),Bulk | D2PAK | Surface Mount | - | -55°C ~ 175°C (TJ) |
![]() IRGSL10B60KDPBF $1.46 | International Rectifier | IGBT NPT 600V 22A TO-262 | Bulk | TO-262 | Through Hole | - | -55°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT 430V 20A TO-262 | Tube | TO-262 | Through Hole | - | -40°C ~ 175°C (TJ) | |
![]() IRGSL15B60KDPBF $1.30 | International Rectifier | IGBT NPT 600V 31A TO262-3 | Bulk | PG-TO262-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() IRGSL15B60KDPBF-INF $1.30 | Infineon Technologies | IGBT NPT 600V 31A TO-262 | Bulk | TO-262 | Through Hole | - | -55°C ~ 150°C (TJ) |

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