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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
International RectifierIGBT 650V 21A D2PAKTubeD2PAKSurface Mount--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 11A D2PAKTubeD2PAKSurface Mount--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 11A D2PAKTape & Reel (TR),Cut Tape (CT)D2PAKSurface Mount--55°C ~ 175°C (TJ)
International RectifierIGBT NPT 600V 11A D2PAKBulkD2PAKSurface Mount--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 12A D2PAKTubeD2PAKSurface Mount--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 13A D2PAKTubeD2PAKSurface Mount--55°C ~ 150°C (TJ)
International RectifierIGBT NPT 600V 13A D2PAKBulkD2PAKSurface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 13A D2PAKTape & Reel (TR)D2PAKSurface Mount--55°C ~ 150°C (TJ)
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