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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR),Cut Tape (CT)----
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR),Cut Tape (CT)----
Infineon TechnologiesIGBT TRENCH 100VTape & Reel (TR)----
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR),Cut Tape (CT)----
onsemiIGBT 430V 10A TO-252AATubeTO-252AASurface MountEcoSPARK®-40°C ~ 175°C (TJ)
Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOBulk--*-
onsemiIGBT 430V 10A TO-252AATape & Reel (TR)TO-252AASurface MountEcoSPARK®-40°C ~ 175°C (TJ)
onsemiIGBT 430V 10A TO-263TubeTO-263 (D2PAK)Surface MountEcoSPARK®-40°C ~ 175°C (TJ)
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