Product categories

Filter by price :
Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Screen Default Ranking Price By Date
Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V 60A TO-247ADTubeTO-247ADThrough HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V TO-247ADTubeTO-247ADThrough HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 48A TO-247ADTubeTO-247ADThrough HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT 600V 50A TO-247ADTubeTO-247ADThrough Hole--
IXYSIGBT 600V 60A TO-247ADTubeTO-247ADThrough HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 70A TO-247ADTubeTO-247ADThrough HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 70A TO-247ADTubeTO-247ADThrough HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 66A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 150°C (TJ)
Add ComparisonUp to 4 can be added