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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() MGD623N $1.92 | Sanken Electric USA Inc. | IGBT 600V 50A 150W TO3P | Bulk | TO-3P | Through Hole | - | 150°C (TJ) |
![]() MGD623S $2.03 | Sanken Electric USA Inc. | IGBT 600V 50A 150W TO3P | Bulk | TO-3P | Through Hole | - | 150°C (TJ) |
| Sanken Electric USA Inc. | IGBT TRENCH 600V 50A TO-247-3 | Tube | TO-247-3 | Through Hole | - | 150°C (TJ) | |
| Sanken Electric USA Inc. | IGBT TRENCH FS 650V 50A TO-3P-3L | Bulk | TO-3P-3L | Through Hole | - | 175°C (TJ) | |
| Sanken Electric USA Inc. | IGBT TRENCH FS 650V 65A TO-3P | Bulk | TO-3P | Through Hole | - | 175°C (TJ) | |
| Sanken Electric USA Inc. | IGBT TRENCH FS 650V 65A TO-3P-3L | Bulk | TO-3P-3L | Through Hole | - | 175°C (TJ) | |
| Sanken Electric USA Inc. | IGBT TRENCH FS 650V 80A TO-3P-3L | Bulk | TO-3P-3L | Through Hole | - | 175°C (TJ) | |
![]() MGP14N60E $0.43 | onsemi | IGBT, 18A, 600V, N-CHANNEL | Bulk | - | - | * | - |

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