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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
MGD623N
MGD623N
$1.92
Sanken Electric USA Inc.IGBT 600V 50A 150W TO3PBulkTO-3PThrough Hole-150°C (TJ)
MGD623S
MGD623S
$2.03
Sanken Electric USA Inc.IGBT 600V 50A 150W TO3PBulkTO-3PThrough Hole-150°C (TJ)
Sanken Electric USA Inc.IGBT TRENCH 600V 50A TO-247-3TubeTO-247-3Through Hole-150°C (TJ)
Sanken Electric USA Inc.IGBT TRENCH FS 650V 50A TO-3P-3LBulkTO-3P-3LThrough Hole-175°C (TJ)
Sanken Electric USA Inc.IGBT TRENCH FS 650V 65A TO-3PBulkTO-3PThrough Hole-175°C (TJ)
Sanken Electric USA Inc.IGBT TRENCH FS 650V 65A TO-3P-3LBulkTO-3P-3LThrough Hole-175°C (TJ)
Sanken Electric USA Inc.IGBT TRENCH FS 650V 80A TO-3P-3LBulkTO-3P-3LThrough Hole-175°C (TJ)
onsemiIGBT, 18A, 600V, N-CHANNELBulk--*-
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