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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT, 10A, 600V, N-CHANNELBulk--*-
onsemiIGBT, 10A, 600V, N-CHANNELBulk--*-
onsemiTRANS IGBT CHIP N-CH 1.2KV 20ABulk--*-
onsemiIGBT, 18A, 600V, N-CHANNELBulk--*-
MotorolaIGBT 1200V 28A TO-247BulkTO-247Through Hole--55°C ~ 150°C (TJ)
onsemiTRANS IGBT CHIP N-CH 600V 50A 3PBulk--*-
onsemiIGBT 66A, 600V, N CHANNEL, TO 26Bulk--*-
onsemiTRANS IGBT CHIP N-CH 600V 66A 3PBulk--*-
Add ComparisonUp to 4 can be added