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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Renesas Electronics CorporationIGBT TRENCH 650V 150A TO-247ATubeTO-247AThrough Hole-175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 1200V 105A TO-247TubeTO-247-4LThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 1200V 105A TO-247TubeTO-247-4LThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 1200V 105A TO247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 1200V 105A TO247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 1800V 80A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 600V 30A TO-3PFMTubeTO-3PFMThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 600V 30A TO-3PFMTubeTO-3PFMThrough Hole--40°C ~ 175°C (TJ)
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