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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT TRENCH FS 650V 200A WAFERBulkWaferSurface Mount--40°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 650V 200A DIEBulkDieSurface Mount--40°C ~ 175°C (TJ)
onsemiIGBT TRENCH FIELD STOP 650V DIEBulkDieSurface Mount--40°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 650V 300A WAFERBulkWaferSurface Mount--40°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 750V 200A WAFERBulkWaferSurface Mount--40°C ~ 175°C (TJ)
onsemiIGBT STEALTH DUAL 600V 30ABulk----
onsemiIGBTBulk----
onsemiPCRU420D-R4707Bulk----
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