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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() NGW40T65M3DFPQ $3.80 | Nexperia USA Inc. | IGBT TRENCH FS 650V 72A TO-247 | Tube | TO-247-3L | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() NGW50T65H3DFPQ $3.96 | Nexperia USA Inc. | IGBT TRENCH FS 650V 80A TO-247 | Tube | TO-247-3L | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() NGW50T65M3DFPQ $2.15 | Nexperia USA Inc. | NGW50T65M3DFP/SOT429-2/TO247-3 | Tube | TO-247-3L | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() NGW60T65M3DFPQ $2.27 | Nexperia USA Inc. | NGW60T65M3DFP/SOT429-2/TO247-3 | Tube | TO-247-3L | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() NGW75T65H3DFPQ $2.51 | Nexperia USA Inc. | NGW75T65H3DFP/SOT429-2/TO247-3 | Tube | TO-247-3L | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() NGW75T65H3DFQ $5.86 | Nexperia USA Inc. | IGBT TRENCH FS 650V 80A TO-247 | Tube | TO-247-3L | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() NGW75T65M3DFPQ $2.51 | Nexperia USA Inc. | NGW75T65M3DFP/SOT429-2/TO247-3 | Tube | TO-247-3L | Through Hole | - | -40°C ~ 175°C (TJ) |
| onsemi | IGBT | Bulk | - | - | - | - |

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