Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
NGTD28T65F2WP	onsemi	IGBT TRENCH FIELD STOP 650V DIE	Bulk	Die	Surface Mount	-	-55°C ~ 175°C (TJ)
NGTG12N60TF1G $1.25	onsemi	IGBT 600V 24A 54W TO-3PF	Tube	-	-	*	-
NGTG15N120FL2WG $1.85	onsemi	IGBT TRENCH FS 1200V 30A TO-247	Bulk,Tube,Tube	TO-247-3	Through Hole	-	-55°C ~ 175°C (TJ)
NGTG15N60S1EG	onsemi	IGBT NPT 600V 30A TO-220AB	Tube	TO-220AB	Through Hole	-	-55°C ~ 150°C (TJ)
NGTG20N60L2TF1G	onsemi	IGBT 600V 40A 64W TO-3PF	Tube,Tube	-	-	*	-
NGTG25N120FL2WG $2.27	onsemi	IGBT TRENCH FS 1200V 50A TO-247	Bulk	TO-247-3	Through Hole	-	-55°C ~ 175°C (TJ)
NGTG30N60FLWG $1.79	onsemi	IGBT TRENCH FS 600V 60A TO-247-3	Tube,Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
NGTG30N60FWG	onsemi	IGBT TRENCH 600V 60A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)