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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT FS 650V 160A TO-247-4LBulk,TubeTO-247-4LThrough Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 650V 100A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH 650V 140A TO-247-3TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 600V 120A TO-247Tube,TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT FIELD STOP 650V 100A TO-247Tube,TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 600V 100A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT 600V 100A TO-247-3Tube,TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT FS 650V 200A TO-247-4LTubeTO-247-4LThrough Hole--55°C ~ 175°C (TJ)
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