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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT TRENCH FS 600V 90A TO-247-3Bulk,TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH FS 1200V 100A TO-247TubeTO-247Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 600V 100A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 600V 100A TO-247TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 100A 223W TO247Tube,Tube--*-
onsemiIGBT TRENCH FS 600V 100A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH 600V 100A TO-247-3Tube,TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 600V 100A TO-247Bulk,TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
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