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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 1500V 10A TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 8A TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT TRENCH 400V IPAKTubeIPAKThrough Hole--40°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT TRENCH 400V IPAKTubeIPAKThrough Hole--40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 20A TO247-3TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 16A TO-263Tape & Reel (TR)TO-263 (D2PAK)Surface Mount--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 13A TO-263BulkTO-263 (D2PAK)Surface Mount--
Infineon TechnologiesIGBT NPT 1200V 30A TO247-3TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
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