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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT NPT 600V 31A TO247-3TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 40A TO247-3TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 36A TO247-3BulkPG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 36A TO247-3TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 23A TO-263BulkTO-263 (D2PAK)Surface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 1200V 46A TO247-3TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 41A TO247-3Bulk,TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 41A TO247-3TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
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