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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGP40V60F $3.76 | STMicroelectronics | IGBT TRENCH FS 600V 80A TO-220 | Tube | TO-220 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGP4M65DF2 $1.36 | STMicroelectronics | IGBT TRENCH FS 650V 8A TO-220 | Tube | TO-220 | Through Hole | M | -55°C ~ 175°C (TJ) |
![]() STGP5H60DF $1.75 | STMicroelectronics | IGBT TRENCH FS 600V 10A TO-220 | Tube | TO-220 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGP6M65DF2 $1.62 | STMicroelectronics | IGBT TRENCH FS 650V 12A TO-220 | Tube | TO-220 | Through Hole | M | -55°C ~ 175°C (TJ) |
![]() STGP6NC60H $0.26 | STMicroelectronics | IGBT 600V 15A TO-220 | Tube | TO-220 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGP6NC60HD $1.64 | STMicroelectronics | IGBT 600V 15A TO-220 | Tube | TO-220 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGP7H60DF $1.65 | STMicroelectronics | IGBT TRENCH FS 600V 14A TO-220 | Tube | TO-220 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGP7NB60HD $1.26 | STMicroelectronics | IGBT 600V 14A TO-220 | Tube | TO-220 | Through Hole | PowerMESH™ | 150°C (TJ) |

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