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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGW19NC60H $0.88 | STMicroelectronics | IGBT 600V 42A TO-247-3 | Tube | TO-247-3 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGW19NC60HD $3.58 | STMicroelectronics | IGBT 600V 42A TO247 | Tube | TO-247 Long Leads | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGW19NC60W $1.54 | STMicroelectronics | IGBT 600V 42A 140W TO247 | Tube | TO-247 Long Leads | Through Hole | PowerMESH™ | -65°C ~ 150°C (TJ) |
![]() STGW19NC60WD $1.06 | STMicroelectronics | IGBT 600V 42A TO-247-3 | Tube | TO-247-3 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGW20H60DF $2.74 | STMicroelectronics | IGBT TRENCH FS 600V 40A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 175°C (TJ) |
| STMicroelectronics | IGBT TRENCH FS 650V 40A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) | |
![]() STGW20IH125DF $3.33 | STMicroelectronics | IGBT TRENCH FS 1250V 40A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGW20NB60KD $2.34 | STMicroelectronics | IGBT 600V 50A TO-247-3 | Tube | TO-247-3 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |

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