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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGW20NC60V $4.29 | STMicroelectronics | IGBT 600V 60A TO-247-3 | Tube | TO-247-3 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGW20NC60VD $3.54 | STMicroelectronics | IGBT 600V 60A TO-247-3 | Tube | TO-247-3 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGW20V60DF $3.49 | STMicroelectronics | IGBT TRENCH FS 600V 40A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGW20V60F $4.06 | STMicroelectronics | IGBT TRENCH FS 600V 40A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGW25H120DF2 $4.29 | STMicroelectronics | IGBT TRENCH FS 1200V 50A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGW25H120F2 $4.44 | STMicroelectronics | IGBT TRENCH FS 1200V 50A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGW25M120DF3 $5.49 | STMicroelectronics | IGBT TRENCH FS 1200V 50A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGW25S120DF3 $8.36 | STMicroelectronics | IGBT TRENCH FS 1200V 50A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |

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