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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 STGW35HF60W $1.54 | STMicroelectronics | IGBT 600V 60A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
STGW35HF60WD $1.64 | STMicroelectronics | IGBT 600V 60A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
STGW35HF60WDI $2.07 | STMicroelectronics | IGBT 600V 60A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| STMicroelectronics | IGBT 600V 70A TO-247-3 | Tube | TO-247-3 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) | |
 STGW35NB60SD $2.32 | STMicroelectronics | IGBT 600V 70A TO-247-3 | Tube | TO-247-3 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
 STGW35NC120HD $4.40 | STMicroelectronics | IGBT 1200V 60A TO-247-3 | Tube | TO-247-3 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
STGW35NC60WD $1.87 | STMicroelectronics | IGBT 600V 70A TO-247-3 | Tube | TO-247-3 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
 STGW38IH130D $2.08 | STMicroelectronics | IGBT 1300V 63A TO247 | Tube | TO-247 Long Leads | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
