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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT 600V 80A TO-247-3TubeTO-247-3Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT TRENCH FS 1200V 80A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 1200V 80A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 600V 80A TO-247TubeTO-247Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 80A TO-247TubeTO-247Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 80A TO-247-4TubeTO-247-4Through HoleHB-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 80A TO-247-3TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 1200V 80A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
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