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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGW39NC60VD $5.49 | STMicroelectronics | IGBT 600V 80A TO-247-3 | Tube | TO-247-3 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGW40H120DF2 $6.91 | STMicroelectronics | IGBT TRENCH FS 1200V 80A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGW40H120F2 $6.09 | STMicroelectronics | IGBT TRENCH FS 1200V 80A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGW40H60DLFB $4.75 | STMicroelectronics | IGBT TRENCH FS 600V 80A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGW40H65DFB $3.30 | STMicroelectronics | IGBT TRENCH FS 650V 80A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGW40H65DFB-4 $4.74 | STMicroelectronics | IGBT TRENCH FS 650V 80A TO-247-4 | Tube | TO-247-4 | Through Hole | HB | -55°C ~ 175°C (TJ) |
![]() STGW40H65FB $4.12 | STMicroelectronics | IGBT TRENCH FS 650V 80A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGW40M120DF3 $5.75 | STMicroelectronics | IGBT TRENCH FS 1200V 80A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |

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