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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGP30H65F $3.46 | STMicroelectronics | IGBT TRENCH FS 650V 60A TO-220 | Tube | TO-220 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGP30IH65DF $0.82 | STMicroelectronics | IGBT TRENCH FS 650V 60A TO-220 | Bulk | TO-220 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGP30M65DF2 $2.15 | STMicroelectronics | IGBT TRENCH FS 650V 60A TO-220 | Tube | TO-220 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGP30NC60K $2.01 | STMicroelectronics | IGBT 600V 60A TO-220 | Tube | TO-220 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGP30NC60S $2.46 | STMicroelectronics | IGBT 600V 55A TO-220 | Tube | TO-220 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGP30NC60W $1.27 | STMicroelectronics | IGBT 600V 60A TO-220 | Tube | TO-220 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGP30V60DF $1.19 | STMicroelectronics | IGBT TRENCH FS 600V 60A TO-220 | Tube | TO-220 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGP30V60F $1.09 | STMicroelectronics | IGBT TRENCH FS 600V 60A TO-220 | Tube | TO-220 | Through Hole | - | -55°C ~ 175°C (TJ) |

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