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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT 600V 35A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 40A TO-220TubeTO-220Through HolePowerMESH™-
STMicroelectronicsIGBT 600V 40A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 40A TO-220TubeTO-220Through HolePowerMESH™-65°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 40A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT TRENCH FS 600V 40A TO-220TubeTO-220Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 40A TO-220BulkTO-220Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 40A TO-220TubeTO-220Through HoleHB2-55°C ~ 175°C (TJ)
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