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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT 600V 23A TO-220FPTubeTO-220FPThrough HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 20A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 20A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 20A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 20A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 21A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 30A TO-220TubeTO-220Through HolePowerMESH™150°C (TJ)
STMicroelectronicsIGBT 600V 30A TO-220TubeTO-220Through HolePowerMESH™150°C (TJ)
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