SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Search productSearch post
— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGP35HF60W $3.83 | STMicroelectronics | IGBT 600V 60A TO-220 | Tube | TO-220 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() STGP35N35LZ $1.16 | STMicroelectronics | IGBT 345V 40A TO-220 | Tube | TO-220 | Through Hole | PowerMESH™ | -55°C ~ 175°C (TJ) |
![]() STGP3HF60HD $1.45 | STMicroelectronics | IGBT 600V 7.5A TO-220 | Tube | TO-220 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() STGP3NB60F $0.44 | STMicroelectronics | IGBT 600V 6A 68W TO220 | Tube | TO-220 | Through Hole | PowerMESH™ | 150°C (TJ) |
![]() STGP3NB60FD $0.50 | STMicroelectronics | IGBT 600V 6A 68W TO220 | Tube | TO-220 | Through Hole | PowerMESH™ | 150°C (TJ) |
![]() STGP3NB60HD $1.02 | STMicroelectronics | IGBT 600V 10A TO-220 | Tube | TO-220 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGP3NB60KD $0.48 | STMicroelectronics | IGBT 600V 10A TO-220 | Tube | TO-220 | Through Hole | PowerMESH™ | 150°C (TJ) |
![]() STGP3NC120HD $2.19 | STMicroelectronics | IGBT 1200V 14A TO-220 | Tube | TO-220 | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |

The activity of extra discounts on wholesale prices is in full swing…
Please fill in your contact information and we will send you the latest wholesale price list.


