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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT 600V 60A TO-220TubeTO-220Through Hole--55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 345V 40A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT 600V 7.5A TO-220TubeTO-220Through Hole--55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 6A 68W TO220TubeTO-220Through HolePowerMESH™150°C (TJ)
STMicroelectronicsIGBT 600V 6A 68W TO220TubeTO-220Through HolePowerMESH™150°C (TJ)
STMicroelectronicsIGBT 600V 10A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 600V 10A TO-220TubeTO-220Through HolePowerMESH™150°C (TJ)
STMicroelectronicsIGBT 1200V 14A TO-220TubeTO-220Through HolePowerMESH™-55°C ~ 150°C (TJ)
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