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Bipolar (BJT)

Bipolar (BJT)

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Central Semiconductor Corp65V 100MA 500MW TH TRANSISTOR-SMTape & Box (TB)TO-92-3Through HoleBC546-65°C ~ 150°C (TJ)
Taiwan Semiconductor CorporationTRANS NPN 65V 0.1A TO-92BulkTO-92Through Hole--65°C ~ 150°C (TJ)
Central Semiconductor Corp65V 100MA 500MW TH TRANSISTOR-SMBoxTO-92-3Through HoleBC546-65°C ~ 150°C (TJ)
Central Semiconductor Corp65V 100MA 500MW TH TRANSISTOR-SMBoxTO-92-3Through HoleBC546-65°C ~ 150°C (TJ)
Central Semiconductor Corp65V 100MA 500MW TH TRANSISTOR-SMTape & Reel (TR)TO-92-3Through HoleBC546-65°C ~ 150°C (TJ)
Central Semiconductor Corp65V 100MA 500MW TH TRANSISTOR-SMTape & Reel (TR)TO-92-3Through HoleBC546-65°C ~ 150°C (TJ)
NXP USA Inc.TRANS NPN 65V 0.1A TO-92-3Tape & Reel (TR)TO-92-3Through Hole-150°C (TJ)
NXP USA Inc.TRANS NPN 65V 0.1A TO-92-3Tape & Box (TB)TO-92-3Through Hole-150°C (TJ)
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