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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
APTGT50SK120TGView Product
IXA20PG1200DHG-TUBView Product
IXA20PG1200DHG-TRRView Product
IXA40PG1200DHG-TRRView Product
F3L400R10W3S7FB11BPSA1View Product
IXSR40N60CD1View Product
MMG05N60DT1View Product
FF800R12KE7HPSA1View Product
MMIX4B22N300View Product
IRG4BC40WView Product
STGB15H60DFView Product
FS75R12W2T4BOMA1View Product
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