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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() SSM6N42FE(TE85L,F) $0.45 | Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.8A ES6 | Tape & Reel (TR),Cut Tape (CT) | ES6 | Surface Mount | - | 150°C (TJ) |
![]() SSM6N43FU,LF $0.31 | Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.5A US6 | Tape & Reel (TR),Cut Tape (CT) | US6 | Surface Mount | - | 150°C (TJ) |
![]() SSM6N44FE,LM $0.30 | Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 0.1A ES6 | Tape & Reel (TR),Cut Tape (CT) | ES6 | Surface Mount | - | 150°C (TJ) |
![]() SSM6N44FU,LF $0.26 | Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 0.1A US6 | Tape & Reel (TR),Cut Tape (CT) | US6 | Surface Mount | - | 150°C |
![]() SSM6N48FU,LF $0.31 | Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 0.1A US6 | Tape & Reel (TR),Cut Tape (CT) | US6 | Surface Mount | U-MOSIII | 150°C |
| Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 0.1A US6 | Tape & Reel (TR) | US6 | Surface Mount | - | -55°C ~ 150°C (TJ) | |
![]() SSM6N55NU,LF $0.48 | Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A 6DFN | Tape & Reel (TR),Cut Tape (CT) | 6-µDFN (2x2) | Surface Mount | - | 150°C (TJ) |
![]() SSM6N56FE,LM $0.28 | Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.8A ES6 | Tape & Reel (TR),Cut Tape (CT) | ES6 | Surface Mount | - | 150°C (TJ) |