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IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 FZ1200R45HL3BPSA1 $3,646.60 | Infineon Technologies | IGBT MODULE 4500V 1200A | Bulk,Tray | Module | Chassis Mount | IHM-B | -40°C ~ 150°C |
 FZ1200R45HL3S7BPSA1 $38,387.70 | Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-IHVB19 | Tray | AG-IHVB190 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
 FZ1200R45HL4BPSA1 $1,556.39 | Infineon Technologies | IGBT MODULE 4500V 1200A | Tray | - | Chassis Mount | - | -40°C ~ 150°C (TJ) |
 FZ1200R45HL4S7BPSA1 $1,655.84 | Infineon Technologies | IHV IHM T | Tray | - | Chassis Mount | - | -40°C ~ 150°C (TJ) |
FZ1200R45KL3B5NOSA1 $1,836.51 | Infineon Technologies | IGBT MODULE 4500V 1200A | Tray | Module | Chassis Mount | - | -50°C ~ 125°C |
FZ1200R45KL3B5P2NOSA1 $1,919.39 | Infineon Technologies | IHV IHM T | Tray | - | - | - | - |
 FZ1400R33HE4BPSA1 $1,481.05 | Infineon Technologies | IGBT MODULE DIODE HVB130-3 | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IHV IHM T XHP 3 3-6 5K AG-IHVB19 | Tray | AG-IHVB190 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
