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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 600V 11A TO-252AATape & Reel (TR)TO-252AA (DPAK)Surface Mount--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 11A TO252-3Tape & Reel (TR)PG-TO252-3Surface Mount--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 11A TO-252AATape & Reel (TR)TO-252AA (DPAK)Surface Mount--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 16A TO-252AATubeTO-252AA (DPAK)Surface Mount--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 16A TO-252AATape & Reel (TR)TO-252AA (DPAK)Surface Mount--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 16A TO252-3Tape & Reel (TR)PG-TO252-3Surface Mount--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 16A TO-252AATape & Reel (TR)TO-252AA (DPAK)Surface Mount--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 22A D2PAKTubeD2PAKSurface Mount--55°C ~ 150°C (TJ)
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