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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT NPT 600V 22A D2PAKTape & Reel (TR),Cut Tape (CT),BulkD2PAKSurface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 22A D2PAKTape & Reel (TR)D2PAKSurface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 430V 20A 125W D2PAKTubeD2PAKSurface Mount--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 430V 20A D2PAKTubeD2PAKSurface Mount--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 430V 20A TO-263ABTape & Reel (TR),Cut Tape (CT)TO-263ABSurface Mount--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 31A D2PAKTubeD2PAKSurface Mount--55°C ~ 150°C (TJ)
International RectifierIGBT NPT 600V 31A D2PAKBulkD2PAKSurface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBTBulk--*-
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