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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 900V 31A TO-247ACBagTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 900V 51A TO-247ACBagTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 29A TO-247ACBagTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 45A TO-247ACBagTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH 600V 240A SUPER-247TubeSUPER-247™ (TO-274AA)Through Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 1200V 80A SUPER-247BagSUPER-247™ (TO-274AA)Through Hole--55°C ~ 150°C (TJ)
International RectifierIGBT NPT 1200V 80A SUPER-247BulkSUPER-247™ (TO-274AA)Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 240A SUPER-247TubeSUPER-247™ (TO-274AA)Through Hole--55°C ~ 175°C (TJ)
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