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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT TRENCH 1200V 72A ISO247TubeISO247Through Hole--
IX526112
IX526112
$14.28
IXYSITF40PF1200DHGTLB-TUBTube----
IX526119
IX526119
$14.03
IXYSITF40PF1200DHGTLB-TRRTape & Reel (TR)----
IXYSIGBT PT 1200V 20A TO-247ADTubeTO-247ADThrough Hole--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 20A TO-220-3TubeTO-220-3Through Hole--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 20A TO-268AATubeTO-268AASurface Mount--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 28A ISOPLUS247TubeISOPLUS247™Through Hole--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 38A TO-220-3TubeTO-220-3Through Hole--40°C ~ 150°C (TJ)
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