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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT H BRIDGE 1200V 63A SMPDTape & Reel (TR)ISOPLUS-SMPD™.BSurface MountISOPLUS™-55°C ~ 150°C (TJ)
IXYSIGBT H BRIDGE 1200V 63A SMPDTubeISOPLUS-SMPD™.BSurface MountISOPLUS™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 78A TO-247ADTubeTO-247ADThrough Hole--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 9A TO-252AATape & Reel (TR)TO-252AASurface Mount--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 9A TO-252AATubeTO-252AASurface MountXPT™-
IXYSIGBT 1200V 9A TO-268AATape & Reel (TR)TO-268AASurface Mount--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 9A TO-268AATubeTO-268AASurface Mount--40°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 9A TO-252AATape & Reel (TR)TO-252AASurface Mount--40°C ~ 150°C (TJ)
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