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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 1600V 28A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 60A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3600V 70A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 86A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1600V 7A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 20A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 34A TO-247HVTubeTO-247HV (IXBH)Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 30A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
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