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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXBF40N160 $19.39 | IXYS | IGBT 1600V 28A ISOPLUS I4-PAC | Tube | ISOPLUS i4-PAC™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBF42N300 $50.48 | IXYS | IGBT 3000V 60A ISOPLUS I4-PAC | Tube | ISOPLUS i4-PAC™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBF50N360 $77.39 | IXYS | IGBT 3600V 70A ISOPLUS I4-PAC | Tube | ISOPLUS i4-PAC™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBF55N300 $77.17 | IXYS | IGBT 3000V 86A ISOPLUS I4-PAC | Tube | ISOPLUS i4-PAC™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBF9N160G $3.45 | IXYS | IGBT 1600V 7A ISOPLUS I4-PAC | Tube | ISOPLUS i4-PAC™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBH10N170 $9.65 | IXYS | IGBT 1700V 20A TO-247AD | Tube | TO-247AD | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBH10N300HV $38.33 | IXYS | IGBT 3000V 34A TO-247HV | Tube | TO-247HV (IXBH) | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBH12N300 $28.13 | IXYS | IGBT 3000V 30A TO-247AD | Tube | TO-247AD | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |

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