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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXBA16N170AHV $21.90 | IXYS | IGBT 1700V 16A TO-263HV | Tube | TO-263HV | Surface Mount | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBA16N170AHV-TRL $29.89 | IXYS | IGBT 1700V 16A TO-263HV | Tape & Reel (TR) | TO-263HV | Surface Mount | BIMOSFET™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT 3000V 29A ISOPLUS I4-PAC | Tube | ISOPLUS i4-PAC™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) | |
![]() IXBF12N300 $20.72 | IXYS | IGBT 3000V 26A ISOPLUS I4-PAC | Tube | ISOPLUS i4-PAC™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT 3000V 37A ISOPLUS I4-PAC | Tube | ISOPLUS i4-PAC™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) | |
![]() IXBF20N300 $37.53 | IXYS | IGBT 3000V 34A ISOPLUS I4-PAC | Tube | ISOPLUS i4-PAC™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBF20N360 $60.70 | IXYS | IGBT 3600V 45A ISOPLUS I4-PAC | Tube | ISOPLUS i4-PAC™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
![]() IXBF32N300 $79.28 | IXYS | IGBT 3000V 40A ISOPLUS I4-PAC | Tube | ISOPLUS i4-PAC™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |

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