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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 3000V 80A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 80A TO-247HVTubeTO-247HVThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1600V 33A TO-247ADBulkTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 80A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 42A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 2500V 104A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 104A TO-247HVTubeTO-247HVThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1600V 5.7A TO-247ADTubeTO-247ADThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
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