IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
IXBN42N170A $22.28	IXYS	IGBT MOD 1700V 42A 312W SOT227B	Tube	SOT-227B	Chassis Mount	BIMOSFET™	-55°C ~ 150°C (TJ)
IXBN75N170 $47.38	IXYS	IGBT MOD 1700V 145A 625W SOT227B	Tube	SOT-227B	Chassis Mount	BIMOSFET™	-55°C ~ 150°C (TJ)
IXBN75N170A	IXYS	IGBT MOD 1700V 75A 625W SOT227B	Tube	SOT-227B	Chassis Mount	BIMOSFET™	-55°C ~ 150°C (TJ)
IXBP5N160G	IXYS	IGBT 1600V 5.7A TO-220-3	Tube	TO-220-3	Through Hole	BIMOSFET™	-55°C ~ 150°C (TJ)
IXBR42N170	IXYS	IGBT 1700V 57A ISOPLUS247	Tube	ISOPLUS247™	Through Hole	BIMOSFET™	-55°C ~ 150°C (TJ)
IXBT10N170 $7.06	IXYS	IGBT 1700V 20A TO-268AA	Tube	TO-268AA	Surface Mount	BIMOSFET™	-55°C ~ 150°C (TJ)
IXBT12N300 $14.03	IXYS	IGBT 3000V 30A TO-268AA	Tube	TO-268AA	Surface Mount	BIMOSFET™	-55°C ~ 150°C (TJ)
IXBT12N300HV $32.19	IXYS	IGBT 3000V 30A TO-268HV	Tube	TO-268HV (IXBT)	Surface Mount	BIMOSFET™	-55°C ~ 150°C (TJ)