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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 2500V 55A PLUS247TubePLUS247™-3Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3600V 125A TO-247PLUS-HVTubeTO-247PLUS-HVThrough HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 3000V 130A PLUS247TubePLUS247™-3Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXBX64N250
IXBX64N250
$109.40
IXYSIGBT 2500V 156A PLUS247TubePLUS247™-3Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 200A PLUS247TubePLUS247™-3Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 110A PLUS247TubePLUS247™-3Through HoleBIMOSFET™-55°C ~ 150°C (TJ)
IXYSIGBT NPT 1200V 38A TO-263AATape & Reel (TR)TO-263AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT NPT 1200V 38A TO-263AATubeTO-263AASurface Mount--55°C ~ 150°C (TJ)
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